Rainbow-electronics TSM10N80 User Manual download pdf

TSM10N80

800V N-Channel Power MOSFET

1/10

Version: A12

220

ITO

220

PRODUCT SUMMARY

(V) R

DS(on)

(Ω) I

(A)

800 1.05 @ V

=10V 9.5

General Description

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic

lamp ballast based on half bridge.

Features

● Low R

DS(ON)

1.05Ω (Max.)

● Low gate charge typical @ 53nC (Typ.)

● Improve dv/dt capability

Block Diagram

N-Channel MOSFET

Ordering Information

Part No. Package Packing

TSM10N80CZ C0 TO-220 50pcs / Tube

TSM10N80CI C0 ITO-220 50pc

/ Tube

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

800 V

Gate-Source Voltage V

±30 V

Continuous Drain Current I

9.5 A

Pulsed Drain Current * I

38 A

Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V

Single Pulse Avalanche Energy (Note 2) E

917 mJ

Avalanche Current (Repetitive) (Note 1) I

9.5 A

Repetitive Avalanche Energy (Note 1) E

29 mJ

Operating Junction Temperature T

150 ºC

Storage Temperature Range T

STG

-55 to +150

* Limited by maximum junction temperature

Definition

1. Gate

2. Drain

3. Source

1 2 3 4 5 6 7 8 9 10

TSM10N80 1