Rainbow-electronics AT45DB321B User Manual

1Features• Single 2.7V - 3.6V Supply• Serial Peripheral Interface (SPI) Compatible• 20 MHz Max Clock Frequency• Page Program Operation– Single Cycle R

10AT45DB321B2223D–DFLASH–10/02Note: In Tables 2 and 3, an SCK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock

11AT45DB321B2223D–DFLASH–10/02Note: r = Reserved BitP = Page Address BitB = Byte/Buffer Address Bitx = Don’t CareTable 4. Detailed Bit-level Addressi

12AT45DB321B2223D–DFLASH–10/02Note: 1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before

13AT45DB321B2223D–DFLASH–10/02AC CharacteristicsSymbol ParameterAT45DB321BUnitsMin MaxfSCKSCK Frequency 20 MHzfCARSCK Frequency for Continuous Array R

14AT45DB321B2223D–DFLASH–10/02Input Test Waveforms and Measurement LevelstR, tF < 3 ns (10% to 90%)Output Test LoadAC WaveformsTwo different timing

15AT45DB321B2223D–DFLASH–10/02Reset Timing (Inactive Clock Polarity Low Shown)Note: The CS signal should be in the high state before the RESET signal

16AT45DB321B2223D–DFLASH–10/02Write Operations The following block diagram and waveforms illustrate the various write sequencesavailable.Main Memory P

17AT45DB321B2223D–DFLASH–10/02Read Operations The following block diagram and waveforms illustrate the various read sequencesavailable.Main Memory Pag

18AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity LowContinuous Array Read (Opcode: 68H)Main Memory Page Read (Op

19AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity Low (Continued)Buffer Read (Opcode: 54H or 56H)Status Register

2AT45DB321B2223D–DFLASH–10/02stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-tained three step Read-Modify-Write

20AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity HighContinuous Array Read (Opcode: 68H)Main Memory Page Read (O

21AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity High (Continued)Buffer Read (Opcode: 54H or 56H)Status Register

22AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – SPI Mode 0Continuous Array Read (Opcode: E8H)Main Memory Page Read (Opcode: D2H)SI11XXX

23AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – SPI Mode 0 (Continued)Buffer Read (Opcode: D4H or D6H)Status Register Read (Opcode: D7H

24AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – SPI Mode 3Continuous Array Read (Opcode: E8H)Main Memory Page Read (Opcode: D2H)SI11XXX

25AT45DB321B2223D–DFLASH–10/02Detailed Bit-level Read Timing – SPI Mode 3 (Continued)Buffer Read (Opcode: D4H or D6H)Status Register Read (Opcode: D7H

26AT45DB321B2223D–DFLASH–10/02Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire ArrayNotes: 1. This type of algorithm is u

27AT45DB321B2223D–DFLASH–10/02Figure 2. Algorithm for Randomly Modifying DataNotes: 1. To preserve data integrity, each page of a DataFlash sector mu

28AT45DB321B2223D–DFLASH–10/02Ordering InformationfSCK (MHz)ICC (mA)Ordering Code Package Operation RangeActive Standby20 10 0.01 AT45DB321B-CCAT45DB3

29AT45DB321B2223D–DFLASH–10/02Packaging Information44C1 – CBGA 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 44C1, 44-ball (5 x 9 A

3AT45DB321B2223D–DFLASH–10/02Memory Architecture DiagramDevice Operation The device operation is controlled by instructions from the host processor. T

30AT45DB321B2223D–DFLASH–10/0232T – TSOP 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 32T, 32-lead (8 x 20 mm Package) Plastic Thi

31AT45DB321B2223D–DFLASH–10/0228R – SOICPIN 10º ~ 8º 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 28R, 28-lead, 0.330" Body W

Printed on recycled paper.© Atmel Corporation 2002.Atmel Corporation makes no warranty for the use of its products, other than those expressly contai

4AT45DB321B2223D–DFLASH–10/02cycle, allowing one continuous read operation without the need of additional addresssequences. To perform a continuous re

5AT45DB321B2223D–DFLASH–10/02loaded into the device. After the last bit of the opcode is shifted in, the eight bits of thestatus register, starting wi

6AT45DB321B2223D–DFLASH–10/02BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE: Apreviously erased page within main memory can be programmed w

7AT45DB321B2223D–DFLASH–10/02MAIN MEMORY PAGE PROGRAM THROUGH BUFFER: This operation is a combina-tion of the Buffer Write and Buffer to Main Memory P

8AT45DB321B2223D–DFLASH–10/02If a sector is programmed or reprogrammed sequentially page-by-page, then the pro-gramming algorithm shown in Figure 1 on

9AT45DB321B2223D–DFLASH–10/02WRITE PROTECT: If the WP pin is held low, the first 256 pages of the main memorycannot be reprogrammed. The only way to r