Rainbow-electronics TSM12N65 User Manual download pdf

TSM12N65

650V N-Channel Power MOSFET

1/8

Version: A10

ITO

220

PRODUCT SUMMARY

(V) R

DS(on)

(Ω) I

(A)

650 0.8 @ V

=10V 6

General Description

The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

● Low R

DS(ON)

0.68Ω (Typ.)

● Low gate charge typical @ 41nC (Typ.)

● Low Crss typical @ 14.6pF (Typ.)

● Fast Switching

Ordering Information

Part No. Package Packing

TSM12N65CI C0

ITO-220 50pcs / Tube

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

650 V

Gate-Source Voltage V

±30 V

Continuous Drain Current

Tc = 25ºC

12 A

Tc = 100ºC 4.5 A

Pulsed Drain Current * I

48 A

Single Pulse Avalanche Energy (Note 2) E

273 mJ

Avalanche Current (Repetitive) (Note 2 I

12 A

Single Pulse Avalanche Energy (Note 1) E

7.6 mJ

Avalanche Current (Repetitive) (Note 1) I

12 A

Total Power Dissipation @ T

= 25

C P

TOT

45 W

Operating Junction Temperature T

150 ºC

Storage Temperature Range T

STG

-55 to +150

Note: Limited by maximum junction temperature

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Case RӨ

2.7

C/W

Thermal Resistance - Junction to Ambient RӨ

62.5

C/W

Notes: Surface mounted on FR4 board t ≤ 10sec

Block Diagram

N-Channel MOSFET

Definition

1. Gate

2. Drain

3. Source

1 2 3 4 5 6 7 8

TSM12N65 1