RLD65MPT3
Laser Diodes
2/2
zAbsolute maximum ratings (Tc=25°C)
Parameter
P
O
V
R
V
R(PIN)
Tstg
Topr
mW
V
V
Symbol
7
2
30
−10 to +70
−40 to +85
Limits Unit
°C
°C
Output
Raser
Operating temperature
Storage temperature
PIN photodiode
Reverse
voltage
zElectrical and optical characteristics (Tc=25°C)
Parameter
Symbol Min. Typ. Max. Unit Conditions
I
th
mA− 20 50
−
−
I
op
mA− 30 60
P
O
=5mW
P
O
=5mW
P
O
=5mW
P
O
=5mW
P
O
=5mW
P
O
=5mW
P
O
=5mW
I
m
mA0.1 0.2 0.5
θ
//
∗
deg7810
θ ⊥
∗
deg20 27 35
∆φ //
deg−20+2
λ nm645 655 660
P
O
=5mW
Astigmatism
∆
µm−−10
P
O
=5mW
∆φ ⊥
deg−30+3
∆Y
∆Z
∆X
µm−80 0 +80
−
V
op
V− 2.3 2.6
η mW/mA0.2 0.4 0.8
∗ θ
//
and θ
⊥
are defined as the angle within which the intensity is 50% of the peak value.
Threshold current
Operating current
Monitor current
Parallel divergence angle
Perpendicular divergence angle
Parallel deviation angle
Peak emission wavelength
Perpendicular deviation angle
Emission point accuracy
Operating voltage
Differential efficiency
zElectrical and optical characteristics curves
Fig.1 Optical output
vs. operating current
7
6
4
5
3
1
2
0
0 20406080100
OPTICAL POWER : P
O
(mW)
OPERATING CURRENT : Iop
(mA)
Tc=25°C
40°C
50°C
60°C
70°C
80°C
1.0
0.5
0
−60 −40 −20 0 604020
INTENSITY
ANGLE (
deg)
θ
⊥
θ
//
Fig.2 Far field pattern
7
1
2
3
4
5
6
0
0 0.1 0.2 0.3
OPTICAL INTENSITY : P
O
(mW)
MONITOR CURRENT : I
m
(mA)
Fig.3 Monitor current
vs. optical output
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