Rainbow-electronics AT28C040 User Manual

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1
LCC
Top View
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
6
5
4
3
2
1
44
43
42
41
40
18
19
20
21
22
23
24
25
26
27
28
A0
I/O0
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
A15
A16
A18
NC
NC
NC
VCC
WE
NC
A17
A14
Features
Read Access Time - 200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 256 Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 256 Byte Page Write Operation
Low Power Dissipation
80 mA Active Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
Rev. 0542B–10/98
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE
Chip Enable
OE Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
SIDE BRAZE,
FLATPACK
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
(continued)
4-Megabit
(512K x 8)
Paged Parallel
EEPROMs
AT28C040
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1 2 3 4 5 6 ... 11 12

Summary of Contents

Page 1 - AT28C040

1LCCTop View78910111213141516173938373635343332313029A12A7A6A5NCNCNCA4A3A2A1A13A8A9A11NCNCNCNCOEA10CE65432144434241401819202122232425262728A0I/O0I/O1I

Page 2

AT28C04010Note: 1. See Valid Part Numbers.Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActive Standby200 80 3 AT28C040-

Page 3

AT28C04011Packaging InformationPIN #1 ID.370(9.40).270(6.86).019(.482).015(.381).050(1.27) BSC.045(1.14) MAX.120(3.05).098(2.49).045(1.14).026(.660).0

Page 4

© Atmel Corporation 1998.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Page 5

AT28C0402The AT28C040 is accessed like a static RAM for the reador write cycle without the need for external components.The device contains a 256-byte

Page 6

AT28C0403Device OperationREAD: The AT28C040 is accessed like a static RAM.When CE and OE are low and WE is high, the data storedat the memory location

Page 7

AT28C0404Notes: 1. X can be VIL or VIH.2. Refer to AC Programming Waveforms.DC and AC Operating RangeAT28C040-20 AT28C040-25Operation OperationRead Pr

Page 8

AT28C0405AC Read Waveforms(1)(2)(3)(4)Note: 1. CE May be delayed up to tACC - tCE after the address transition wihtout impact on tACC.2. OE may be del

Page 9

AT28C0406AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Max UnitstAS, tOESAddress, OE Set-up Time 0 nstAHAdd

Page 10

AT28C0407Page Mode Write Waveforms(1)(2)Notes: 1. A8 through A18 must specify the page address during each high to low transition of WE (or CE).2. OE

Page 11

AT28C0408Software DataProtection Enable Algorithm(1)Notes: 1. Data Format: I/O7 - I/O0 (Hex);Address Format: A14 - A0 (Hex).2. Write Protect state wil

Page 12 - 0542B–10/98/xM

AT28C0409Notes: 1. These parameters are characterized and not 100% tested.2. See AC Read Characteristics.Data Polling WaveformsNotes: 1. These paramet

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