Rainbow-electronics AT29BV010A User Manual

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1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 120 ns
Low Power Dissipation
15mAActiveCurrent
40 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 Bytes/Sector)
Internal Address and Data Latches for 128 Bytes
Two 8K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable
Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072
words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM
technology, the device offers access times to 120 ns, and a low 54 mW power
dissipation. When the device is deselected, the CMOS standby current is less than 40
µA. The device endurance is such that any sector can typically be written to in excess
1-megabit
(128K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT29BV010A
Rev. 0519D–FLASH–05/02
PLCC
Top View
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
NC
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
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Summary of Contents

Page 1 - AT29BV010A

1Features• Single Supply Voltage, Range 2.7V to 3.6V• Single Supply for Read and Write• Software Protected Programming• Fast Read Access Time - 120 ns

Page 2

10AT29BV010A0519D–FLASH–05/02Notes: 1. These parameters are characterized and not 100% tested.2. See tOEspec in AC Read Characteristics.Data Polling W

Page 3

11AT29BV010A0519D–FLASH–05/02Software Product Identification Entry(1)Software Product Identification Exit(1)Notes: 1. Data Format: I/O7 - I/O0 (Hex);A

Page 4

12AT29BV010A0519D–FLASH–05/02Ordering InformationtACC(ns)ICC(mA)Ordering Code Package Operation RangeActive Standby120 15 0.04 AT29BV010A-12JCAT29BV01

Page 5

13AT29BV010A0519D–FLASH–05/02Packaging Information32J–PLCCDRAWING NO.REV. 2325 Orchard Parkway San Jose, CA 95131RTITLE32J, 32-lead, Plastic J-le

Page 6

14AT29BV010A0519D–FLASH–05/0232T – TSOP 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 32T, 32-lead (8 x 20 mm Package) Plastic Thin

Page 7

Printed on recycled paper.© Atmel Corporation 2002.Atmel Corporation makes no warranty for the use of its products, other than those expressly contain

Page 8

2AT29BV010A0519D–FLASH–05/02of 10,000 times. The programming algorithm is compatible with other devices in Atmel’sLow Voltage Flash family of products

Page 9

3AT29BV010A0519D–FLASH–05/02Any attempt to write to the device without the 3-byte command sequence will start theinternal write timers. No data will b

Page 10

4AT29BV010A0519D–FLASH–05/02and valid data will be read. Examining the toggle bit may begin at any time during a pro-gram cycle.OPTIONAL CHIP ERASE MO

Page 11

5AT29BV010A0519D–FLASH–05/02Note: 1. After power is applied and VCCis at the minimum specified data sheet value, the system should wait 20 ms before a

Page 12

6AT29BV010A0519D–FLASH–05/02AC Read WaveformsNotes: 1. CE may be delayed up to tACC-tCEafter the address transition without impact on tACC.2. OEmay be

Page 13

7AT29BV010A0519D–FLASH–05/02Input Test Waveforms and Measurement LevelOutput Test LoadNote: 1. These parameters are characterized and not 100% tested.

Page 14

8AT29BV010A0519D–FLASH–05/02AC Byte Load Waveforms(1)(2)WE ControlledCEControlledAC Byte Load CharacteristicsSymbol Parameter Min Max UnitstAS,tOESAdd

Page 15 - Battery-Voltage

9AT29BV010A0519D–FLASH–05/02Software Protected Program WaveformNotes: 1. OE must be high when WE and CE arebothlow.2. A7 through A16 must specify the

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